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Hafnium oxide-based thin films, in particular hafnium zirconium oxide (HZO), have potential for applications in nonvolatile memory and energy harvesting. Atomic layer deposition (ALD) is the most widely used method for HZO deposition due to its precise thickness control and ability to provide conformal coverage. Previous studies have shown the effects of different metal precursors, oxidizer precursors, and process temperatures on the ferroelectric properties of HZO. However, no mechanism has been identified to describe the different phase stabilities as the metal precursor purge time varies. This study investigates how varying the metal precursor purge time during plasma-enhanced ALD (PE-ALD) influences the phases and properties of the HZO thin films. Grazing incidence X-ray diffraction, Fourier transform infrared spectroscopy, and scanning transmission electron microscopy are used to study the changes in phase of HZO with variation of the metal precursor purge time during the PE-ALD process. The phases observed are correlated with polarization and relative permittivity responses under an electric field, including wake-up and endurance effects. The resulting phases and properties are linked to changes in composition, as measured using time-of-flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy. It is shown that short metal precursor purge times result in increased carbon and nitrogen impurities and stabilization of the antipolar Pbca phase. Long purge times lead to films comprising predominantly the ferroelectric Pca21 phase. 

We report on the synthesis of self-intercalated Nb1+xSe2 thin films by molecular beam epitaxy. Nb1+xSe2 is a metal-rich phase of NbSe2 where additional Nb atoms populate the van der Waals gap. The grown thin films are studied as a function of the Se to Nb beam equivalence pressure ratio (BEPR). X-ray photoelectron spectroscopy and x-ray diffraction indicate that BEPRs of 5:1 and greater result in the growth of the Nb1+xSe2 phase and that the amount of intercalation is inversely proportional to the Se to Nb BEPR. Electrical resistivity measurements also show an inverse relationship between BEPR and resistivity in the grown Nb1+xSe2 thin films. A second Nb-Se compound with a stoichiometry of ∼1:1 was synthesized using a Se to Nb BEPR of 2:1; in contrast to the Nb1+xSe2 thin films, this compound did not show evidence of a layered structure. 

Abstract Ferroelectricity in hafnia films has triggered significant research interest over the past decade due to its immense promise for next‐generation memory devices. However, the origin of ferroic behavior at the nanoscale and the means to control it remain an open question, with the consensus being that it deviates from conventional ferroelectrics. In this work, a novel approach is presented to tune ferroelectric properties of hafnia through environmental control using piezoresponse force microscopy (PFM). A reversible transition from non‐ferroelectric to ferroelectric behavior by modulating the surrounding atmosphere is demonstrated. Notably, the domain relaxation dynamics exhibit striking sensitivity to environmental factors, including ambient conditions, specific gas compositions (N₂, CO₂, O₂), and humidity levels. The critical role of surface water removal, gas molecule adsorption, and their interactions with near‐surface oxygen vacancies is identified and the injected charge in determining ferroelectricity in uncapped hafnia films. These insights reveal a significant strategy for stabilizing ferroic responses by carefully regulating the chemical environment, offering new possibilities for precise control in hafnia‐based films.